Parallel or interconnected pores’ formation through etchant selective silicon porosification

نویسندگان

چکیده

The effect of the oxidizer present in etching solution on surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical was studied. morphologies Si wafers porosified two different solutions, HF/H 2 O HF/KMnO 4 , were compared to establish how either oxidizers (H or KMnO ) should be chosen depending desired application. A comparative study revealed that parallel pores with wire-like structures interconnected cheese-like can when H are chosen, respectively. Careful analysis SEM images carried out ImageJ samples prepared more porous due aggressive etching. Additionally, experimental theoretical Raman spectroscopic studies have been utilized presence low-dimensional nanostructures, which few nanometers size, at microscopic level silicon.

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ژورنال

عنوان ژورنال: Canadian Journal of Chemistry

سال: 2022

ISSN: ['0008-4042', '1480-3291']

DOI: https://doi.org/10.1139/cjc-2021-0190